unisonic technologies co., ltd 3n90z preliminary power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2013 unisonic technologies co., ltd qw-r502-913.a 3 amps, 900 volts n-channel power mosfet ? description the utc 3n90z provides excellent r ds(on) , low gate charge and operation with low gate voltages. this device is suitable for use as a load switch or in pwm applications. ? features * r ds(on) =4.1 ? @v gs =10 v * ultra low gate charge ( typical 22.7 nc ) * low reverse transfer capacitance ( c rss = typical 13 pf ) * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 3N90ZL-TF1-T 3n90zg-tf1-t to-220f1 g d s tube note: pin assignment: g: gate d: drain s: source
3n90z preliminary power mosfet unisonic technologies co., ltd 2 of 6 www.unisonic.com.tw qw-r502-913.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage (v gs =0v) v dss 900 v drain-gate voltage (r g =20k ? ) v dgr 900 v gate-source voltage v gss 20 v gate-source breakdown voltage (i gs =1ma) bv gso 30(min) v insulation withstand voltage (dc) v iso 2500 v avalanche current (note 2) i ar 3 a continuous drain current i d 3 a pulsed drain current i dm 10 a single pulse avalanche energy (note 3) e as 180 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns power dissipation p d 25 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. 2. 3. 4. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width limited by t j(max) starting t j =25 c, i d =i ar , v dd =50v i sd Q 3a, di/dt Q 200a/ s, v dd Q bv dss , t j Q t j(max) . ? thermal data parameter symbol rating unit junction to ambient ja 62.5 c/w junction to case jc 5 c/w
3n90z preliminary power mosfet unisonic technologies co., ltd 3 of 6 www.unisonic.com.tw qw-r502-913.a ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250 a 900 v drain-source leakage current i dss v ds =900v, v gs =0v 1 a gate-source leakage current i gss v gs =20v, v ds =0v 10 a on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250 a 3 3.75 4.5 v static drain-source on-state resistance r ds ( on ) v gs =10v, i d =1.5a 4.1 4.8 ? dynamic characteristics input capacitance c iss v ds =25v, v gs =0v, f=1mhz 590 pf output capacitance c oss 63 pf reverse transfer capacitance c rss 13 pf switching characteristics turn-on delay time t d ( on ) v dd =450v, i d =1.5 a, r g =4.7 ? v gs =10v 18 ns turn-on rise time t r 7 ns turn-off delay time t d ( off ) v dd =720v, i d =1.5 a, r g =4.7 ? v gs =10v 45 ns turn-off fall time t f 18 ns total gate charge q g v dd =720v, i d =3a, v gs =10v 22.7 nc gate-source charge q gs 4.2 nc gate-drain charge q dd 12 nc source- drain diode ratings and characteristics diode forward voltage(note 1) v sd i sd =3a ,v gs =0v 1.6 v source-drain current i sd 3 a source-drain current (pulsed) i sdm 12 a reverse recovery current i rrm i sd =3a, di/dt=100a/ s, v dd =100v, t j =25c 8.7 a body diode reverse recovery time t rr 510 ns body diode reverse recovery charge q rr 2.2 nc notes: 1. pulse width=300 s, duty cycle Q 1.5% 2. c oss(eq) is defined asa constant equivalent capac itance giving the same charging time as c oss when v ds increases from 0to 80% v dss .
3n90z preliminary power mosfet unisonic technologies co., ltd 4 of 6 www.unisonic.com.tw qw-r502-913.a ? test circuits and waveforms same type as d.u.t. l v dd driver v gs r g - v ds d.u.t. + * dv/dt controlled by r g * i sd controlled by pulse period * d.u.t.-device under test p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) - + v gs = p.w. period fig. 1a peak diode recovery dv/dt test circuit fig. 1b peak diode recovery dv/dt waveforms
3n90z preliminary power mosfet unisonic technologies co., ltd 5 of 6 www.unisonic.com.tw qw-r502-913.a ? test circuits and waveforms (cont.) fig. 2a switching test circuit fig. 2b switching waveforms 50k 0.3 f dut v ds same type as d.u.t. 10v 0.2 f 12v charge q gs q gd q g v gs 3ma v gs fig. 3a gate charge test circuit fig. 3b gate charge waveform fig. 4a unclamped inductive switching test circuit fig. 4b unclamped inductive switching waveforms
3n90z preliminary power mosfet unisonic technologies co., ltd 6 of 6 www.unisonic.com.tw qw-r502-913.a utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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